The New Name in Power Semiconductors
LFUSCD Series SiC Schottky Diodes
Near-zero Recovery Time and Low Forward Voltage for Higher System Efficiency
How would your next power electronics application benefit from higher efficiency, greater robustness,
and less stringent thermal management? With negligible reverse recovery, the new LFUSCD Series of
SiC Schottky Diodes reduces switching losses dramatically to boost system efficiency. They also
support large surge currents and have a high maximum junction temperature of 175 °C.
Littelfuse offers a new generation of SiC Schottky diodes in voltage classes of 650 V or 1200 V with
current ratings from 4 A to 30 A. Choose from two-lead (TO-220) or three-lead (TO-247) packages.
Reverse Recovery
Applications
6
5
4
3
JBS Current, IF (A)
• Power factor correction (PFC)
––– LFUSCD: Qrr=21nC
––– Si comp 1: Qrr=112nC
––– Si comp 2: Qrr=32nC
––– Si comp 3: Qrr=93nC
• Buck or boost stages in DC-DC converters
• Free-wheeling diodes in inverter stages
(switch-mode power supplies, solar inverters,
UPSs, industrial drives)
2
1
• High-frequency output rectification
-0
-1
Features
-2
di/dt = 250A/µs
VR = 400V
Tj = 125˚C
-3
͂
-4
-5
-6
22.35
• Ultra-low capacitive stored charge and
near-zero reverse recovery
• Maximum junction temperature of 175 °C
22.40
22.45
22.50
22.55
• Merged p-n Schottky (MPS) device architecture
Time (µs)
The ultra-short reverse recovery time of the LFUSCD Series
supports efficient, high-speed switching.
Benefits
• Suitable for high-frequency power switching;
negligible switching losses; reduced stress on
the opposing switch
• Larger design margin and relaxed thermal
management requirements
• Enhanced surge capability and extremely
low leakage
DataSheet
Resources
Samples
The New Name in Power Semiconductors
Reverse Recovery Charge,
600 / 650 V 10 A Rectifier
Blocking Voltage
SiC
1200 V
1000nC
1000 V
Recovery Time
2000ns
Legend
Si Schottky
Barrier Diode
1000
500
800
600
Si Super Fast Diode
500
Si Ultra Fast Diode
100
Si Fast Recovery
(Epitaxial) Diode
100
400
Si Standard
Recovery Diode
50
200
50
SiC
0
0
The SiC Schottky diode can achieve
high blocking voltages.
SiC
0
Unlike most of the silicon alternatives,
they have the lowest reverse recovery
charge leading to near-zero reverse
recovery time.
SiC Schottky
Barrier Diode
Switching losses can be slashed,
leading to substantial increases in
system efficiency.
SiC Merged p-n Schottky (MPS) Architecture
P+
P+
Forward
Current
Flow
P+
P+
le
p
N- Drift Layer
Anode
De
Surge
Current
Flow
The p+ implants in the Merged p-n
Schottky (MPS) structure inject
minority carriers to accommodate
sudden spikes in current without
failure, making them more robust
and reliable than conventional
silicon diodes.
P+
n
P+
Schottky
Contact
io
Anode
ti o n R eg
N- Drift Layer
N+ Substrate
N+ Substrate
Cathode
Cathode
In the OFF state,
depletion regions extend
from the p+ implants
into the n- drift layer,
effectively pinching off
the pathway for reverse
current and drastically
reducing leakage.
Choose the LFUSCD Series SiC Schottky Diode best suited to your emerging power electronics requirements.
Series
Repetitive
Peak
Reverse
Voltage
NonContinuous
Rreverse Repetitive
Total
Forward
Forward
leakage Forward Capacitive
Voltage
Current
current
Surge
Charge
Current
Package
Maximum
Operating
Junction
Temperature
Configuration
VRRM
Min.
(V)
IF (AV)
(A)
VF
(V)
IR
(µA)
IFSM
(A)
QC
(nC)
LFUSCD04065A
650
4
1.50
170
32
6
TO220-2L
175
Single
LFUSCD06065A
650
6
1.50
200
48
9
TO220-2L
175
Single
LFUSCD08065A
650
8
1.50
230
64
13
TO220-2L
175
Single
LFUSCD10065A
650
10
1.50
250
75
16
TO220-2L
175
Single
LFUSCD16065B
650
16
1.50
460
96
26
TO247-3L
175
Single
LFUSCD20065B
650
20
1.50
500
90
32
TO247-3L
175
Single
LFUSCD05120A
1200
5
1.50
190
40
14
TO220-2L
175
Single
LFUSCD10120A
1200
10
1.50
250
80
35
TO220-2L
175
Single
LFUSCD15120A
1200
15
1.50
300
120
60
TO220-2L
175
Single
LFUSCD20120B
1200
20
1.50
500
160
70
TO247-3L
175
Common
Cathode
LFUSCD30120B
1200
30
1.50
600
240
120
TO247-3L
175
Common
Cathode
© 2016 Littelfuse • SiC Schottky Diodes
Circuit Diagram
TJ
Max.
(°C)
littelfuse.com