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Studies of HPM Effects in Electronic
Systems
J. Rodgers, M. Holloway (DEPS Scholar), T. Firestone and
V. L. Granatstein,
Institute for Research in Electronics and Applied Physics
University of Maryland
College Park, MD 20742
rodgers@umd.edu
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Outline
• The basic electronics of HPM effects
• Summary of 2008 work
– Began testing of mixed-signal systems
– Studied HPM susceptibility of sensors (ARL)
– Development of systems modeling capability
• Wideband multi-frequency test source
(AFOSR-Plasma Physics)
• Proposed 2009 Effort
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Scope of
Work
EM Coupling
Cavity Fields
Validate
Test
Circuit Response
HPM Source
HPM Effects
Models
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Large-signal (LS) Semiconductor Electronics
NL
QM
Input Pad
Cross section of a planar
semiconductor
Typical LS currentvoltage characteristics
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Semiconductor junctions + package/trace reactance
 Nonlinear resonances  NL Frequency products
HPM
10
Amplitude
Amplitude
10
0
0
0
2000
Frequency
0
2000
Frequency
Both frequency bands can produce effects.
HPM-driven instability in circuits
Typical RF Voltage @ IC
Input
Circuit Response
4
5
3
4
Voltage
Voltage
5
2
3
2
1
1
0
0
0
10
20
Time (msec)
30
0
5
10
Time (msec)
15
20
The Effects “Spectrum”
RF-to-BB Voltage Transfer
2.5
0.13 Micron Processor
High-speed_CMOS
CD 4000
2
1.5
1
0.5
0
0 Magnitude 1000
2000 vs. Frequency
3000
of Input Impedance
and Bias
Voltage(MHz)
Frequency
1000
8
6
Impedance [Ohms]
Quality Factor
4000
4
2
100
Vbias= -0.70
Vbias= -0.60
Vbias= -0.50
10
Vbias= -0.40
0
Vbias= 0.0
0.0
0.5
1.0
1.5
2.0
2.5
Resonant Frequency (GHz)
3.0
3.5
Vbias= +2.0
1
0
0.5
1
Frequency [GHz]
1.5
2
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•IR PIN Photo Detector
Effect (V / kW*m^2)
HPM Effects in Sensors & Detectors
Applications: Communications, Imaging, Ranging, Detection, Encoding
600
400
200
0
1
1.1
1.2
1.3
1.4
1.5
•Hall Effect Sensor
Effect (V / kW*m^2)
Frequency (GHz)
100
80
60
40
20
0
1
1.1
1.2
1.3
Frequency (GHz)
1.4
1.5
Soft effects could be fatal to a system
3.5
2
1.5
1
2.5
2
4
1.5
2
1
Gain
0
0.5
0.5
RF Out
0
0
0.2
0.4
0.6
0.8
RF Amplitude (V)
Over-Current: PMOS
and NMOS conduct at
the same time!
1
-2
0
0
0.2
0.4
0.6
0.8
RF Amplitude (V)
Cascaded Gain Effects
1
Output RF (V)
Vout (V)
Ids (mA)
2.5
6
RF Gain (dBv)
3-10 times
normal
current
3
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HPM “Over-Current” Effect in CMOS
500
PMOS
Ids
Ids (mA)
400
1500 MHz
Vg
300
800 MHz
200
NMOS
DC
400 MHz
100
100 MHz
0
0
0.5
1
V g (V)
1.5
2
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Can existing codes (e.g. Agilent ADS) be
used to model HPM effects?
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RF Model Libraries for Standard IC Packages
HPM
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The EM characteristics of electrically small (d<l)
features (IC packaging leads, bonding wires, etc.) can
be extracted and modeled as lumped elements.
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Parasitic elements are then coupled to nonlinear
circuit models
Bond wire and
package model
Nonlinear IC model
Models agree well at the device level.
400
CMOS
ESD
Ids (m A)
300
200
Comparison of measured &
simulated over-current
effect in AMI 0.5m CMOS
100
0
0
1
2
V g (V)
•Model parameters extracted from
process technology files.
•Some modification required to account
for NQS and HF device operation.
•Use nonlinear device and harmonic
balance simulation mode (s>3).
3
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AGILENT ADS Design Flow
HPM
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Development of Novel Wideband HPM Test Sources
High-power Output
Directional
Coupler
Traveling-wave
Device
Plasma
E-Beam
Dynamic Control
Delay Line
Variable Atten.
High-Current
Plasma Cathode
High-Power
RF Coupler
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HPM source with chirp-hop output frequency
Loop Gain = 15 dB
Time (ms)
Time (ms)
Loop Gain = 5 dB
Sw
Frequency (MHz / 10)
Sw
Frequency (MHz / 10)
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Collaborations
• NSWC to conduct effects tests on vehicles
using UMD source.
• ARL: performing basic effects tests on
various sensors (e.g. IR) of interest.
• AFRL: EMERD
• NRL
• Sandia: new basic research program in
progress.
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Research Personnel
• PhD:
– Todd Firestone, graduated December 2008
– Mike Holloway, DEPS Scholarship, projected to
graduate fall 2009
• Postdoctoral:
– Dr. Zeynep Dilli: QM device physics and
modeling, joined group Jan. 2009
• Undergraduates:
– Collin Kennedy & Mark Strother (juniors physics)